2mbi 200p-140 2-pack igbt 1400v 200a igbt module ( p-series ) n n features ? square sc soa at 10 x i c ? simplified parallel connection ? narrow distribution of characteristics ? high short circuit withstand-capability n n applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply n n outline drawing n n maximum ratings and characteristics n n equivalent circuit ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 1400 v gate -emitter voltage v ges 20 v continuous t c =25c 300 continuous t c =80c 200 collector 1ms t c =25c 600 current 1ms t c =80c 400 -i c 200 1ms -i c pulse 400 max. power dissipation p c 1500 w operating temperature t j +150 c storage temperature t stg -40 ~ +125 c isolation voltage a.c. 1min. v is 2500 v mounting *1 3.5 terminals *2 4.5 note: *1:recommendable value; 2.5 ~ 3.5 nm (m5) or (m6) *2:recommendable value; 3.5 ~ 4.5 nm (m6) ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =1400v 2.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 400 a gate-emitter threshold voltage v ge(th) v ge =20v i c =200ma 6.0 8.0 9.0 v t j = 25c v ge =15v i c =200a 2.7 3.0 t j =125c v ge =15v i c =200a 3.3 input capacitance c ies v ge =0v 20000 output capacitance c o es v ce =10v 3000 pf reverse transfer capacitance c res f=1mhz 1300 t on v cc =600v 1.2 t r i c =200a 0.6 t off v ge = 15v 1.0 t f r g =4.7 w 0.3 diode forward on-voltage v f i f =200a v ge =0v 2.4 3.3 v reverse recovery time t rr i f =200a 350 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 0.085 thermal resistance r th(j-c) diode 0.180 c/w r th(c-f) with thermal compound 0.025 screw torque v ce(sat) collector-emitter saturation voltage turn-on time turn-off time v s i c i c pu lse a nm
2mbi 200p-140 2-pack igbt 1400v 200a 0 1 2 3 4 5 6 0 100 200 300 400 500 10v 11v 12v 15v v ge =20v collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 5 6 0 100 200 300 400 500 10v 11v 12v 15v v ge =20v collector current vs. collector-emitter voltage t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 5 10 15 20 25 0 2 4 6 8 10 i c =400a i c =200a i c =100a collector-emitter vs. gate-emitter voltage t j =25c collector emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 5 10 15 20 25 0 2 4 6 8 10 i c =400a i c =200a i c =100a collector-emitter vs. gate-emitter voltage t j =125c collector emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 100 200 300 400 10 100 1000 t r t f t off t on switching time vs. collector current v cc =600v, r g =4,7 w , v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] collector current: i c (a) 0 100 200 300 400 10 100 1000 t r t f t off t on switching time vs. collector current v cc =600v, r g =4,7 w , v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] collector current: i c (a)
2mbi 200p-140 2-pack igbt 1400v 200a 1 10 100 10 100 1000 10000 t f t off t r t on switching time vs. r g v cc =600v, i c =200a, v ge =15v, t j =25c gate resistance : r g [ w ] switching time : t on , t r , t off , t f [nsec] 0 500 1000 1500 0 200 400 600 800 1000 v cc =400, 600, 800v 0 5 10 15 20 25 gate-emitter voltage : v ge [v] collector current vs. collector-emitter voltage t j =25c collector-emitter-voltage : v ge [v] gate charge: q g (nc) 0 1 2 3 4 0 100 200 300 400 500 25c t j =125c forward voltage vs. forward current v ge =0v forward current : i f [a] forward voltage : v f [v] 0 100 200 300 400 10 100 1000 i rr = 25c t rr = 25c i rr =125c t rr =125c reverse recovery characteristics t rr , i rr vs. i f reverse recovery current : i rr [a] reverse recovery time : t rr [nsec] forward current : i f [a] 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 igbt fwd transient thermal resistance thermal resistance : r th(j-c) [c/w] pulse width : p w [sec] 0 200 400 600 800 1000 1200 1400 1600 0 500 1000 1500 2000 2500 rbsoa (repetitive pulse) scsoa (non-repetitive pulse) reverse biased safe operating area +v ge =15v, -v ge 15v, t j 125c, r g 3 4,7 w collector current : i c [a] collector-emitter voltage : v ce [v]
2mbi 200p-140 2-pack igbt 1400v 200a 0 100 200 300 400 0 20 40 60 80 100 120 switching loss vs. collector current v cc =600v, r g =4,7 w , v ge =15v e on 125c e on 25c e off 125c e off 25c e rr 125c e rr 25c switching loss : e on , e off , e rr [mj/cycle] collector current : i c [a] 0 5 10 15 20 25 30 35 0,1 1 10 100 c res c oes c ies capacitance vs. collector-emitter voltage t j =25c capacitance: c ies , c oes , c res [nf] collector emitter voltage : v ce [v]
for more information, contact: collmer semiconductor, inc. p.o. box 702708 dallas, tx 75370 972-233-1589 972-233-0481 fax http://www.collmer.com
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